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NPN Silicon Double Transistors
Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage
q
BCV 61
Type BCV 61 A BCV 61 B BCV 61 C
Marking 1Js 1Ks 1Ls
Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS 99 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg
Values 30 30 6 100 200 200 300 150 - 65 ... + 150
Unit V
mA
mW C
Rth JA Rth JS

240 170
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCV 61
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 - - hFE BCV 61 A BCV 61 B BCV 61 C VCEsat - - VBEsat - - VBE 580 - 660 - 700 770 700 900 - - 90 200 250 600 100 110 200 420 - 180 290 520 220 450 800 mV - - 15 5 nA
A
Values typ. max.
Unit
30 30 6
- - -
- - -
V
-
Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1)
Pulse test conditions: t 300 s, D = 2 %.
Semiconductor Group
2
BCV 61
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 A IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 C TA = 150 C Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Noise figure IC = 200 A, VCE = 5 V, RS = 2 k f = 1 kHz, B = 200 Hz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz fT Ccb Cibo F - - - - 250 3 8 2 - - - - dB MHz pF VBES 0.4 - - - - 1.8 - IC1 / IC2 IC1 / IC2 IE2 0.7 0.7 - - - 5 1.3 1.3 - mA V Values typ. max. Unit
h11e h12e h21e h22e
- - 100 -
4.5 2 - 30
- - 900 -
k 10- 4 -
S
1)
Without emitter resistor. Device mounted on alumina 15 mm x 16.5 mm x 0.7 mm.
Semiconductor Group
3
BCV 61
Test circuit for current matching
Note: Voltage drop at contacts: VCO <
2 VT = 16 mV 3
Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3
Note: BCV 61 with emitter resistors
Semiconductor Group
4
BCV 61
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
5

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